LPCVD 立式爐管設(shè)備

所屬分類：

第一代半導(dǎo)體工藝設(shè)備

第三代半導(dǎo)體工藝設(shè)備

概要：

? LPCVD設(shè)備是半導(dǎo)體集成電路制造的重要設(shè)備之一，主要用于多晶硅、氮化硅、氧化硅薄膜的生長,它是將原材料氣體(或者液態(tài)源氣化)用熱能激活發(fā)生化學(xué)反應(yīng)而在基片表面生成固體薄膜，LPCVD過程是在低壓下進行的，由于氣壓低，氣體分子平均自由程大，使生長的薄膜均勻性好，此外基片可以豎放使得設(shè)備裝片量大，特別適用于工業(yè)化生產(chǎn)

關(guān)鍵詞：

LPCVD (立式/臥式)

LPCVD 立式爐管設(shè)備

產(chǎn)品概述/Product Introduction：

♦ LPCVD設(shè)備是半導(dǎo)體集成電路制造的重要設(shè)備之一，主要用于多晶硅、氮化硅、氧化硅薄膜的生長,它是將原材料氣體(或者液態(tài)源氣化)用熱能激活發(fā)生化學(xué)反應(yīng)而在基片表面生成固體薄膜。LPCVD過程是在低壓下進行的，由于氣壓低，氣體分子平均自由程大，使生長的薄膜均勻性好，此外基片可以豎放使得設(shè)備裝片量大，特別適用于工業(yè)化生產(chǎn)

LPCVD equipment is one of the important equipments for semiconductor integrated circuit manufacturing, which is mainly used for the growth of polysilicon, silicon nitride and silicon oxide thin films. It activates raw material gas (or liquid source gasification) with heat energy to generate solid thin films on the substrate surface. LPCVD process is carried out under low pressure. Because of low pressure and large average free path of gas molecules, the uniformity of the grown film is good. The substrate can be placed vertically, which makes the equipment load large, especially suitable for industrial production.

♦ 立式LPCVD采用鐘罩式結(jié)構(gòu)，設(shè)計嵌套腔體機械手傳片組件、舟旋轉(zhuǎn)組件,具有占地面積小成膜均勻性高、工藝穩(wěn)定性高等優(yōu)點。主要用于二氧化硅、摻雜多晶硅、氮化硅膜層的制備工藝

Vertical LPCVD adopts bell jar structure, and designs nested cavity manipulator film transmission assembly and boat rotation assembly, which has the advantages of small occupied area, high film formation uniformity and high process stability. It is mainly used for preparing silicon dioxide, doped polysilicon and silicon nitride films.

產(chǎn)品特點/Product Characteristics：

♦ 全自動傳送，定位精準(zhǔn)，穩(wěn)定可靠

Fully automatic transmission, accurate positioning, stability and reliabilityt

♦ 高潔凈度工藝環(huán)境，有效控制污染

High cleanliness process environment, effective pollution control

♦ 成膜均勻性高

High uniformity of film formation

♦ 溫度控制采用串級控制方式，對基片實際溫度進行實時智能控制

The temperature control adopts cascade control mode, and the real-time itelligent control of the actual temperature of the substrate is carried out

♦ 裝載采用碳化硅(SiC)懸臂槳,避免了與工藝管磨擦產(chǎn)生粉塵

Silicon carbide (SiC) cantilever paddle is used for loading, which avoids dust generated by friction with process pipe

♦ 工作壓力閉環(huán)自動控制，提高工藝穩(wěn)定性和重復(fù)性

Closed loop automatic control of working pressure Improves process stabilty and repeatabllty

♦ 可根據(jù)客戶需求配置多工藝組合的機臺

Multi-process combination of machines according to customer demandol

技術(shù)指標(biāo)/Technical Indicators：

工藝	LP-SiN TEST Item工藝試驗		Control控制
Nitride Deposition 氮化硅沉積	Particle（EA）顆粒度	Transfer particle 轉(zhuǎn)移顆粒	<15EA (>0.32μm)
		Process particle 過程顆粒	<60EA (>0.32μm)， <80EA (>0.226μm)
	Thickness（A）厚度	NIT1500	1500±50
	Uniformity 均勻性		within wafer 片內(nèi)<2.5% Wafer to wafer<2.5% Run to run 爐間<2%
	Wafer size 晶片尺寸		6/8/12 inch wafer
	Process temperature range 制程溫度范圍		500°C-900°C
	Length of constant temperature zone 恒溫區(qū)長度		≥800mm
	Temperature control accuracy 控溫精度		±1°C