產(chǎn)品分類
SiC籽晶粘接設(shè)備
所屬分類:
第三代半導(dǎo)體工藝設(shè)備
概要:
? 籽晶的粘接工藝技術(shù)是將SiC籽晶通過有機(jī)膠粘接在石墨紙上,提高籽晶粘接質(zhì)量是保證高品質(zhì)SiC晶體生長的首要前提。
關(guān)鍵詞:
SiC籽晶粘接
SiC籽晶粘接設(shè)備
產(chǎn)品概述/Product Introduction:
♦ 本設(shè)備是將SiC籽晶通過有機(jī)膠粘接在石墨上。提高籽晶粘接質(zhì)量是保證高品質(zhì)SiC晶體生長的首要前提。
The equipment is to bond SiC seed crystals to graphite by means of an organic adhesive.Improving the bonding quality of seed crystals is the primary prerequisite to ensure the growth of high quality Sic crystals.
技術(shù)指標(biāo)/Technical Indicators:
晶圓尺寸: 6-8英寸 Wafer size: 6-8 inches |
溫度200-800°C,溫度均勻性土±2°C Temperature 200-800 C, temperature uniformity±2 C |
壓力:最大2萬KN,力均勻性<±1% Pressure Maximum 20,000 KN,Force Uniformity<±1% |
真空度:≤10Pa Vacuum degree:≤10Pa |
壓頭:柔性壓頭/硬性壓頭 Indenter: Flexible indenter/rigid indenter |
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